| PART |
Description |
Maker |
| RF1128 |
BROADBAND MEDIUM POWER
|
RF Micro Devices
|
| RF1128 |
BROADBAND MEDIUM POWER SPDT SWITCH
|
RFMD
|
| INA-34063 |
3.0 GHz Medium Power Silicon RFIC Amplifier(3.0 GHz中等功率硅射频集成电路放大器)
3V Fixed Gain. Medium Power Amplifier
3.0 GHz的中功率硅射频放大器.0千兆赫中等功率硅射频集成电路放大器）
|
Agilent(Hewlett-Packard)
|
| 2SA2091S 2SA2091STPQ |
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN
Medium power transistor (60V/ 1A)
Medium power transistor (−60V, −1A)
Medium power transistor (-60V, -1A)
|
TE Connectivity, Ltd.
ROHM[Rohm]
|
| SBM82314X SBM82314 SBM82314Z SBM81314G SBM81314N S |
Medium Power BIDI Optical Standard Module 1550 nm Emitting, 1310 nm Receiving
From old datasheet system
Transceiver
Medium Power BIDI Optical Standard Module 1550 nm Emitting/ 1310 nm Receiving
Components and FTTx solutions - Tx 1550nm/Rx 1310nm, Medium Power
|
INFINEON[Infineon Technologies AG]
|
| SF25JZ51 SF25GZ51 F25JZ51 |
SF25JZ51
THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS
MEDIUM POWER CONTROL APPLICATIONS 中功率控制中的应
|
TOSHIBA[Toshiba Semiconductor]
|
| 2090-6204-00 2090-6210-00 2090 2090-6205-00 2090SE |
Two-Way Isolated Power Dividers Tapered, Ultra Broadband
Circular Connector; Body Material:Aluminum; Series:PT01; No. of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Pin; Insert Arrangement:14-5 双向圆锥隔离功率分配器，超宽
Two-WayIsolatedPowerDividersTapered/UltraBroadband
Two-Way Isolated Power Dividers TaperedUltra Broadband 双向圆锥隔离功率分配器，超宽
|
3M Company
TycoElectronics
MACOM[Tyco Electronics]
|
| SL2101CNP1Q SL2101CNP2Q SL2101CNP1P SL2101 SL2101C |
Synthesized broadband converter with programmable power.
Synthesized Broadband Converter with Programmable Power 合成宽带可编程电源转换器
|
Zarlink Semiconductor Inc.
Zarlink Semiconductor, Inc.
Zarlink Semiconductor I...
|
| NBB-312 NBB-312-E NBB-312-T1 NBB-X-K1 |
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz 0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Cascadable Broadband GaAs MMIC Amplifier DC to 12 GHz
|
http://
RF Micro Devices, Inc.
RFMD[RF Micro Devices]
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
| BCP54 BCP54-16 BCP56-10 BCP56-16 BCP55-10 BCP55-16 |
NPN medium power transistors
TRANSISTOR MEDIUM POWER 晶体管中功率
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
Microchip Technology, Inc.
|
